2SD103 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Complement to Type 2SB503 ·Minimum Lot-to-

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.8 –0.3 +0.2 s Features q q q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 +0.2 1.1 –0.1 s Absolute Max

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 ·Minimum Lot-to-Lot variations for robu

SMD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High Voltage VCEO=150V +0.2 9.70 -0.2 +0.