2SC5517 डाटा शीट PDF( Datasheet )

Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 I Fe

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to