2SC5480 डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
2SC5480	Silicon NPN Triple Diffused Planar Transistor 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper di	Hitachi Semiconductor	PDF
2SC5480	Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-t	Inchange Semiconductor	PDF

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