डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC5450 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable o |
Inchange Semiconductor |
|
2SC5450 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN5955
NPN Triple Diffused Planar Silicon Transistor
2SC5450
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO= |
Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |