2SC5200 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 10

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Power Dissipat

2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for

NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 MHz • High Voltage: VCEO = 250 V • Wide S.O.A. for

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c■ Audio power amplifier roduDescriptio

isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 ·Minimum