2SC512 डाटा शीट PDF( Datasheet )

SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. 5Tff i2SC512i Unit in mm 09.39MAX. 08.45 MAX FEATURES :

Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-base voltage (

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (

2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25°

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Display horizont

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5124 DESCRIPTION ·Silicon NPN diffused planar transistor ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust