2SC503 डाटा शीट PDF( Datasheet )

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2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC =

Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Sol

Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features 9.9±0.3 φ3.2±0.1 2.9±0.2 q High collector to emitter VC

Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder

Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±

Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±