2SC4960 डाटा शीट PDF( Datasheet )

Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot v

Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO