2SC496 डाटा शीट PDF( Datasheet )

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Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot v

Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper d

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4963 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built in damper diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for

2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline MPAK 3 1 2 1.