2SC4881 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 0.8 μs (typ.)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4881 DESCRIPTION ·With TO-220F package ·Low saturation voltage ·High speed switching time APPLICATIONS

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4881 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 0