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2SC454 | NPN TRANSISTOR 2SC454
Silicon NPN Epitaxial
Application
High frequency amplifier, mixer
Outline
TO-92 (2)
1. Emitter 2. Collector 3. Base 3 2 1
2SC454
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage C |
Hitachi Semiconductor |
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2SC4540 | NPN TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications Power Switching Applications
2SC4540
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) |
Toshiba Semiconductor |
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2SC4540 | Transistors SMD Type
Power Switching Applications 2SC4540
Transistors
Features
Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 500mA) High Speed Switching Time: tstg = 0.4ìs(typ.) Small Flat Package PC = 1 to 2W (mo |
Kexin |
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2SC4541 | NPN TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications Power Switching Applications
2SC4541
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) |
Toshiba Semiconductor |
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2SC4541 | Transistors SMD Type
Power Switching Applications 2SC4541
Transistors
Features
Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mou |
Kexin |
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2SC4542 | SILICON POWER TRANSISTOR www.datasheet4u.com
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage APPLICATIONS ·Horizontal deflection output fo |
SavantIC |
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2SC4542 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4542
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob |
INCHANGE |
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