डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC4102 | Silicon Transistor Silicon Epitaxial Planar Transistor
FEATURES
Excellent hFE linearity. Power dissipation:PCM=200mW
Pb
Lead-free
Production specification
2SC4102
APPLICATIONS
NPN Silicon Epitaxial Planar Transist |
GME |
|
2SC4102 | High-voltage Amplifier Transistor 2SC4102 / 2SC3906K
High-voltage Amplifier Transistor (120V, 50mA)
Datasheet
Parameter
VCEO IC
Value
120V 50mA
lFeatures
1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K.
lOutline
S |
Rohm |
|
2SC4102 | High-voltage Amplifier Transistor SMD Type
High-voltage Amplifier Transistor 2SC4102
Transistors
Features
High breakdown voltage.(VCEO = 120V)
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Co |
Kexin |
|
2SC4102 | TRANSISTOR 2SC4102 TRANSISTOR (NPN)
FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Volt |
Jin Yu Semiconductor |
|
2SC4102W | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z Excellent hFE linearity. Power dissipation:PCM=200mW
Production specification
2SC4102W
Pb
Lead-free
APPLICATIONS
z NPN Silicon Epitaxial |
Galaxy Semi-Conductor |
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