डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC4003 | NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor
FEATURES
High hFE hFE=60 to 200. Low VCE(sat)=0.6V.
Pb
Lead-free
Production specification
2SC4003
TO-251
TO-252
MAXIMUM RATING operating temperature range a |
GME |
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2SC4003 | Silicon NPN Transistor Ordering number : ENN2959B
2SC4003
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage. • Adoption of MBIT process. • Excellent hFE |
Sanyo Semicon Device |
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2SC4003 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operatio |
Inchange Semiconductor |
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2SC4003 | Silicon NPN transistor 2SC4003
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.
特征 / Features 高击穿电压,极好的放大� |
BLUE ROCKET ELECTRONICS |
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2SC4003 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
www.DataSheet4U.com
TO-251 Plastic-Encapsulated Transistors
2SC4003
TRANSISTOR (NPN)
TO-251
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3. EMITT |
TRANSYS |
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2SC4003 | NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com
SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor 2SC4003
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
High breakdown voltage
+0.2 9.70 -0.2
+ |
KEXIN |
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2SC4003 | NPN Transistor 2SC4003(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
1 23
3. EMITTER
Features
High hFE
hFE=60 to 200
low VCE(sat) VCE(sat)=0.6V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
TO-252 |
LGE |
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