2SC3871 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-L

Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±0.2 s Features 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3