डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3856-P | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE
APPLICATIONS |
Inchange Semiconductor |
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2SC3856-P | Silicon NPN Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |