डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3659 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATI |
Inchange Semiconductor |
|
2SC3657 | Silicon NPN Power Transistors | Inchange Semiconductor |
|
2SC3657 | NPN Transistor | Toshiba Semiconductor |
|
2SC3652 | SILICON NPN EPITAXIAL TRANSISTOR | Hitachi Semiconductor |
|
2SC3650 | Transistor | Kexin |
|
2SC3653 | PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS | Sanyo |
|
2SC3654 | PNP / NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
2SC3651 | NPN Transistor | Sanyo Semicon Device |
|
2SC3650 | Transistor | Jin Yu Semiconductor |
|
2SC3650 | General-Purpose Amplifier | GME |
|
2SC3650 | NPN Transistor | WEJ |
www.DataSheet.in | 2017 | संपर्क |