2SC3650 डाटा शीट PDF( Datasheet )

Production specification High hFE,Low-Frequency General-Purpose Amplifier Applications FEATURES Pb  High DC current gain. Lead-free  Low collector-to-emitter saturation voltage.  Large current c

Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications • LF amplifier

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1

Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of �

2SC3650 SOT-89-3L TRANSISTOR (NPN) FEATURES  Small Flat Package  High DC Current Gain  Low VCE(sat)  Large Current Capacity APPLICATIONS  LF Amplifiers, Various Drivers, Muting Circuit 1. BASE

RoHS 2SC3650 2SC3650 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage OV(BR)CBO: 30 V Operating and storage junction temperat