डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3640 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for rob |
Inchange Semiconductor |
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2SC3640 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SC3647 | PNP / NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3646 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3645 | PNP / NPN Epitaxial Planar Silicon Transistors | ON Semiconductor |
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2SC3643 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3645 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3642 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3648 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
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2SC3647 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
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2SC3649 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |