2SC3632 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Voltage ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliab

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3632-Z DESCRIPTION ·With TO-252(DPAK) packaging ·High collector-emitter voltage ·Low collector saturation voltage ·Minimum Lot-to-Lot variations

SMD Type NPN Silicon Epitaxial Transistor 2SC3632-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.2 9.70 -0.2 High speed tf 0.5ìs +0.1 0.80-0.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all