डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3590 | Power Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
perf |
Inchange Semiconductor |
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2SC3599 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3597 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3590 | Power Transistor | Inchange Semiconductor |
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2SC3598 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3595 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3596 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3591 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3591 | NPN Transistor | INCHANGE |
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2SC3591 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |