2SC3588-Z डाटा शीट PDF( Datasheet )

DATA SHEET SILICON POWER TRANSISTOR 2SC3588-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Int

isc Silicon NPN Power Transistor 2SC3588-Z DESCRIPTION ·Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·Complement to Type 2

SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.