डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3588 | NPN Transistor isc Silicon NPN Power Transistor
2SC3588
DESCRIPTION ·Low Collector Saturation Voltage-
VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 400V(Min) ·Complement to Type 2SA |
INCHANGE |
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2SC3588-Z | NPN Transistor DATA SHEET
SILICON POWER TRANSISTOR
2SC3588-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
DESCRIPTION
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NEC |
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2SC3588-Z | NPN Transistor isc Silicon NPN Power Transistor
2SC3588-Z
DESCRIPTION ·Low Collector Saturation Voltage-
VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 400V(Min) ·Complement to Type 2 |
INCHANGE |
|
2SC3588-Z | NPN Transistor SMD Type
Transistors
NPN Silicon Triple Diffused Transistor 2SC3588-Z
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
High voltage VCEO=400V
+0.2 9.70 -0.2
+0.15 6.50-0.15 +0.2 5.30-0. |
Kexin |
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