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2SC3585 | NPN Transistor DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3585
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and |
NEC |
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2SC3585 | Silicon NPN Transistor isc Silicon NPN RF Transistor
DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwid |
Inchange Semiconductor |
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2SC3585 | NPN Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC3585
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz
+0.1 1.3-0.1
1
+0.1 0 |
Kexin |
www.DataSheet.in | 2017 | संपर्क |