डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3550 | Power Transistor isc Silicon NPN Power Transistor
2SC3550
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust devi |
Inchange Semiconductor |
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2SC3550 | Power Transistor | Inchange Semiconductor |
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2SC3552 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SC3559 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3557 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3554 | NPN Silicon Transistor | NEC |
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2SC3551 | Transistor | Fuji Electric |
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2SC3552 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3551 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3553 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SC3551 | NPN Transistor | INCHANGE |
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