डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3514 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
2SC3514
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 ·Minimum Lot-to-Lot variations for |
Inchange Semiconductor |
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2SC3518 | Silicon Power Transistors | Renesas |
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2SC3518-Z | SILICON POWER TRANSISTOR | Renesas |
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2SC3514 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SC3519A | Silicon NPN Transistor | Sanken electric |
|
2SC3512 | Silicon NPN RF Transistor | Inchange Semiconductor |
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2SC3510 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SC3519A | SILICON POWER TRANSISTOR | SavantIC |
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2SC3512 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SC3512 | Silicon NPN Transistor | Renesas |
|
2SC3519 | Silicon NPN Transistor | Sanken electric |
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