डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3479 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device pe |
Inchange Semiconductor |
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2SC3478 | NPN SILICON TRANSISTORS | NEC |
|
2SC3474 | Silicon NPN Epitaxial Type TRANSISTOR | Toshiba Semiconductor |
|
2SC3475 | Power Transistor | Inchange Semiconductor |
|
2SC3478 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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2SC3470 | Silicon NPN Epitaxial Transistor | Hitachi Semiconductor |
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2SC3479 | Power Transistor | Inchange Semiconductor |
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2SC3478A | NPN SILICON TRANSISTORS | NEC |
www.DataSheet.in | 2017 | संपर्क |