डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3462 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance |
Inchange Semiconductor |
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2SC3467 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3460 | NPN Transistor | Sanyo Semicon Device |
|
2SC3468 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SC3460 | SILICON POWER TRANSISTOR | SavantIC |
|
2SC3466 | NPN Triple Diffused Planar Type Silicon Transistor | Sanyo Semicon Device |
|
2SC3461 | NPN Transistor | Sanyo Semicon Device |
|
2SC3466 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3468 | HIGH VOLTAGE TRANSISTOR | UTC |
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2SC3461 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3460 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |