2SC3420 डाटा शीट PDF( Datasheet )

2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • High DC current gain : hFE = 140 to 600 (VCE = 2

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.0A ·DC Current Gain- : hFE= 70(Min)@IC= 4A ·Low Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 4A ·Minimum Lot-to-Lot variations for

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector powe

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3420 TRANSISTOR (NPN) TO – 126C FEATURES z High DC Current Gain z Low Saturation Voltage z High Collector Power

2SC3420 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package.  特征 / Features 高直流电增益,饱和压降

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURES z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A) Pb Lead-free hFE=70(Min.) (VCE=2V,IC=4A) z Low Saturation Voltage:VCE(sat)=1.0V(Max.)(IC=4A,IB=