2SC3419 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. 2SC3419 Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) • Hi

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3419 DESCRIPTION ·Low Collector Saturation Voltage ·High power dissipation ·Complementary to 2SA1356 ·100% avalanche tested ·Minimum Lot-to-Lot