2SC3412 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SC3412 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable op |
 Inchange Semiconductor |
|
| 2SC3419 | Silicon NPN Transistor |  Toshiba Semiconductor |
|
| 2SC3417 | PNP/NPN Epitaxial Planar Silicon Transistors |  Sanyo Semicon Device |
|
| 2SC3416 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
| 2SC3412 | Power Transistor | Inchange Semiconductor |
|
| 2SC3413 | Silicon NPN Epitaxial Transistor |  Hitachi Semiconductor |
|
| 2SC3415 | Triple Diffused Planar NPN Silicon Transistor |  Rohm |
|
| 2SC3415 | NPN Plastic-Encapsulated Transistor |  SeCoS |
|
| 2SC3419 | NPN Transistor |  INCHANGE |
|
| 2SC3416 | NPN Transistor | INCHANGE |
|
| 2SC3415S | Chroma Amplifier Transistor | Rohm |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |