डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3376 | NPN TRIPLE DIFFUSED TRANSISTOR |
Toshiba Semiconductor |
|
2SC3376 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
2SC3376
DESCRIPTION
·
·Collector-Emiiter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance |
INCHANGE |
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