2SC3355 डाटा शीट PDF( Datasheet )

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise ampl

UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER  FEATURES * Low Noise and High Gain * High Power Gain 1 TO-92  ORDERING INFORMATION Orderi

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for rob

2SC3355 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 低噪声和高功率增益。 Low