2SC3279 डाटा शीट PDF( Datasheet )

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600

RoHS 2SC3279 2SC3279 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature ran

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (

ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On sp

2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On spe

2SC3279 Elektronische Bauelemente 2A , 30V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC current gain and excellent hFE lineari

2SC3279 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 用于中功率放大电路。 Medi