डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC2983 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Com |
Toshiba Semiconductor |
|
2SC2983 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
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2SC2983 | Silicon NPN Transistor Silicon NPN Epitaxial Type
FEATURES
High transition frequency:fT=100MHz(typ).
Complementary to 2SA1225.
Pb
Lead-free
APPLICATIONS
Power Amplifier Applications. Driver Stage Amplifier Appli |
GME |
|
2SC2983 | NPN Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC2983
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High Transiton Frequency: Ft=100MHz(TYP.)
+0.2 9.70 -0.2
6.50 +0.2 5.30-0 |
Kexin |
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2SC2983-O | NPN Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Low Collector Saturation Voltage x Execllent |
MCC |
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2SC2983-Y | NPN Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Low Collector Saturation Voltage x Execllent |
MCC |
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