2SC2921 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·High Power Dissipation ·Complement to Type 2SA1215 ·Minimum Lot-to-Lot variations for robust device p

LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2921 160 160 5 15 4 150(Tc=25°C) 150 –55 to +150 2SC2921 Application : Audio and General Purpose (Ta=25°C) 2SC2921 100max 100max 160