2SC2914 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor 2SC2914 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and

: SILICON NPN TRIPLE DIFFUSED TYPE 3 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS FEATURES . Excellent Switching Times : t r=1.0/*s(Max.), tf=l. 0/*s(Ma

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation AP