2SC2881 डाटा शीट PDF( Datasheet )

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High voltage:VCEO=120V  High transition frequency;fT=120MHz.  PC=500mW.  Complements the 2SA1201. Pb Lead-free 2SC2881

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • High voltage: VCEO = 120 V • High transition frequency: f

2SC2881 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.  特征 / Features 特征频率高，电压高,封�

Plastic-Encapsulate Transistors FEATURES • High voltage:VCEO=120V • High transition frequency;fT=120MHz. • PC=500mW. • Complements the 2SA1201. Maximum Ratings (Ta=25 Parameter Collector-Base Voltage

UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS  FEATURES * High voltage: VCEO=120V * High transition frequency: fT=120MHz(typ.)

SMD Type Voltage Amplifier Applications 2SC2881 Transistors Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Rati

2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25℃ unles