2SC2782 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SC2782 | Silicon NPN Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
C |
 Toshiba Semiconductor |
|
| 2SC2782 | NPN SILICON RF POWER TRANSISTOR 2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band.
PACKAGE STYLE .500 6L |
 ASI |
|
| 2SC2782 | Silicon NPN POWER TRANSISTOR HG Semiconductors
2sc2782HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
|
 HGSemi |
|
| 2SC2782A | Silicon NPN epitaxial planar type Transistor 2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
www.DataSheet4U.com
2SC2782A
Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
VHF BAND POWER AMPLIFIER APPLICATIONS
z Output Power |
Toshiba Semiconductor |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |