| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SC2612 7 — — — — — — — — — — — — — 1.2 — Max Unit —V —V —V 100 µA 100 µA — — 1.0 V 1.5 V 1.0 µs 2.5 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = –IB2 = 0.6 A VBE = –5 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 400 V, IE |
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SavantIC |
SILICON POWER TRANSISTOR oltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=;,L=100mH IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=400V; IE=0 VCE=350V; RBE=; IC=1.5A ; VCE= |
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INCHANGE |
NPN Transistor lector-Emitter Sustaining Voltage IC= 30mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB |
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Hitachi Semiconductor |
Silicon NPN Transistor A*1 I C = 3 A, IB1 = –IB2 = 0.6 A, VCC ≅ 150 V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — 1.2 — — 100 100 — — 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE |
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