2SC2594 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust de

Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter 120° 7.5+–00..15 Unit: mm 2.9±0.2 2.3±0.2 3.8±0.3 11.0±0.5 ■ Features 3.0

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2594 DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For elec