डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC2564 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1094 ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
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2SC2564 | Silicon NPN Transistor SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=140V • High Transition Frequency : fT=90MHz (Typ.)
• Complementary to 2SA1094. • Recommen |
Toshiba |
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2SC2564 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2564
DESCRIPTION ·With MT-200 package ·Complement to type 2SA1094 ·High transition frequency APPLICATIONS |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |