2SC2168 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot variations for ro

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2168 DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=200V(min) APPLICATI