2SC100 डाटा शीट PDF( Datasheet )

:) SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS FEATURES . Output Power : P =l. 2W(Min. (f=470MHz, VCC=12.6V, I»i=0.3W) Unit in mm 09.39 MAX. 8.4 5 MAX r -j 13 Xr < ar^ d to -

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1002 DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applic

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC1004 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in horizontal deflectio

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1004 DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance a

isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 700 mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design

www.DataSheet4U.com Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.8 W (Tamb=25℃) 2. BASE Collect