| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ,IB=0 IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-0.5A ; VCE=-5V IE=0.5A ; VCE=-10V 60 |
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INCHANGE |
PNP Transistor SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= |
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Toshiba |
SILICON PNP TRANSISTOR . Low Collector Saturation Voltage : VcE(sat)=-1.0V(Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C=30W (Tc=25°C) . Complementary to 2SD1354 Unit in mm : jl3ma^. 0&2±Q2 MAXIMUM RATINGS (Ta=25°C^> CHARACTERISTIC SYMBOL Collector-Base |
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