2SB967 डाटा शीट PDF( Datasheet )

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Po

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Po

SMD Type Silicon PNP Epitaxial Planar Type 2SB967 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Possible to solder the radiation fin directly to printed cicuit board. Low collector-emitte

Product specification 2SB967 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Possible to solder the radiation fin directly to printed cicuit board. Low collector-emitter saturation voltage VCE(sat). +0