2SB936 डाटा शीट PDF( Datasheet )

Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation volt

Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Hi

SMD Type Silicon PNP Epitaxial Planar Type 2SB936 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. +

Product specification 2SB936 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2

UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s a

Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation volt

SMD Type Silicon PNP Epitaxial Planar Type 2SB936A TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching.