2SB834 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor 2SB834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complementary t

www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio freque

UNISONIC TECHNOLOGIES CO., LTD 2SB834 HIGH VOLTAGE TRANSISTOR „ DESCRIPTION Low frequency power amplifier applications. PNP SILICON TRANSISTOR Lead-Free: 2SB834L Halogen Free: 2SB834G „ ORDERING INFORMATI

TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitt

2SB834(BR3CA834R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package. 特征 / Features 饱和压降低，集电

Elektronische Bauelemente 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Power switching applications CLASSIFICA