2SB755 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SB755 | SILICON PNP TRANSISTOR 2SB755
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) Complementary to 2SD845. |
 Toshiba |
|
| 2SB755 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB755
·
DESCRIPTION ·With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High brea |
 SavantIC |
|
| 2SB755 | PNP Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 ·Minimum Lot-to-Lot variations for robust device
pe |
 INCHANGE |
शेयर लिंक :
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