2SB676 डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
2SB676	PNP Transistor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Volta	INCHANGE	PDF
2SB676	Silicon PNP Transistor www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com	Toshiba	PDF
2SB676	SILICON POWER TRANSISTOR SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTO	SavantIC	PDF

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