2SB507 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor 2SB507 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to T

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB507 DESCRIPTION ·With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for

PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifier.  Complements the 2SD313. Pb Lead-free Production specification 2SB507 TO-220AB MAXIMUM RATING operating temperature range app

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SB507 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in power amplifier and switching circuits. Pinning 1 = Bas

BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Material: Molded Plastic. UL flammability  Classificatio